Sequential in-situ heating and deposition of halogen-doped silicon oxide

摘要

A low dielectric constant insulating film on a substrate is formed by introducing a process gas comprising a silicon source, a fluorine source, and oxygen into a chamber. The process gas is formed into a plasma to deposit at least a first portion of the insulating film over the substrate. The wafer and the first portion of the insulating film are then heated to a temperature of about 100-500° C. for a period of time. The film may include several separate portions, the deposition of each of which is followed by a heating step. The film has a low dielectric constant and good gap-fill and stability due to the lack of free fluorine in the film.