发明名称 |
METHOD OF MANUFACTURING Ge-Sb-Te SPUTTERING TARGET MATERIAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a Ge-Sb-Te sputtering target material for a thin film medium which records information by using the phase transformation of a recording layer material. SOLUTION: The method of manufacturing the Ge-Sb-Te sputtering target material comprises steps of: preparing a powder fabricated by rapidly cooling a raw material containing Ge, Sb and Te by inert gas atomization; performing cold or warm compaction by using, among particles of the above powder, particles having >=20μm particle size and also having a particle size distribution where specific surface area per unit weight is <=300 mm2/g; and sintering the resultant green compact.
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申请公布号 |
JP2001123266(A) |
申请公布日期 |
2001.05.08 |
申请号 |
JP19990299045 |
申请日期 |
1999.10.21 |
申请人 |
SANYO SPECIAL STEEL CO LTD |
发明人 |
HASHIMOTO KAZUYA;YANAGIMOTO MASARU |
分类号 |
G11B7/26;B22F9/08;C22C1/04;C23C14/34;(IPC1-7):C23C14/34 |
主分类号 |
G11B7/26 |
代理机构 |
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