发明名称 OXIDE SUBSTRATE FOR PRODUCING EPITAXIAL FILM, METHOD OF PRODUCING EPITAXIAL FILM AND PIEZOELECTRIC DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an oxide substrate useful for producing an epitaxial film by which an eqitaxial film having quality nearly equal to that of the conventional epitaxial film can be obtained at low cost, and to provided a method of producing the epitaxial film. SOLUTION: The surface of the oxide substrate useful for producing an epitaxial film is a non-mirror surface having an arithmetic mean roughness (Ra), prescribed by JISB0601-1994, of >0.02μm. The method of producing the epitaxial film is comprised of epitaxially growing a film on an oxide substrate having such a nonmirror surface.
申请公布号 JP2001122699(A) 申请公布日期 2001.05.08
申请号 JP19990299819 申请日期 1999.10.21
申请人 MURATA MFG CO LTD 发明人 SHIMOKATA MIKIO
分类号 C30B29/30;C30B19/00;(IPC1-7):C30B29/30 主分类号 C30B29/30
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