发明名称 |
Voltage generation circuit having boost function and capable of preventing output voltage from exceeding prescribed value, and semiconductor memory device provided therewith |
摘要 |
A voltage generation circuit includes a boost circuit boosting a power supply voltage and transmitting the boosted voltage to an output transistor according to a boost control signal, a gate boost circuit boosting a gate voltage VHbst of the output transistor according to the boost control signal, a clamp circuit having a function of clamping VHbst to a prescribed voltage, and an output transistor receiving VHbst at its gate and provided to connect the boost circuit and a voltage supply node. The clamp circuit is activated according to the boost control signal.
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申请公布号 |
US6229740(B1) |
申请公布日期 |
2001.05.08 |
申请号 |
US19990466481 |
申请日期 |
1999.12.17 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OGURA TAKU |
分类号 |
G11C16/06;G05F3/16;G11C5/14;G11C8/08;(IPC1-7):G11C7/00 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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