发明名称 |
Field emission displays with reduced light leakage |
摘要 |
Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. It the silicided layer is treated at a temperature above 1000° C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
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申请公布号 |
US6228667(B1) |
申请公布日期 |
2001.05.08 |
申请号 |
US20000607563 |
申请日期 |
2000.06.29 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
CATHEY, JR. DAVID A.;LEE JOHN K.;ZHANG TIANHONG;MORADI BEHNAM |
分类号 |
H01J1/05;H01J9/02;H01L21/00;H01L21/4763;H01L29/06;(IPC1-7):H01L21/00 |
主分类号 |
H01J1/05 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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