发明名称 |
Uniformity improvement of high aspect ratio contact by stop layer |
摘要 |
The poor uniformity of Interlevel Dielectric Deposition (ILD) thickness for High Aspect Ratio (HAR) contact after Chemical Mechanical Planarization (CMP) will cause serious underlayer loss due to the longer over-etching time that is required to compensate for thickness differences within the wafer. Prior Art uses 1.5K Plasma Enhanced Tetra-Ethyl-Ortho-Silicate (PETEOS) to serve as a stop layer and thus reduce underlayer loss. The present invention teaches using a non-silicon oxide containing SiN/SiON or Si3N4/SiON as a stop layer. The present invention therefore is aimed at reducing underlayer loss and thereby improving the uniformity of the underlayer thickness upon completion of the hole etching process. Concurrently, the over-etch time can be reduced to less than 10% of the time required for Prior Art contact hole etching.
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申请公布号 |
US6227211(B1) |
申请公布日期 |
2001.05.08 |
申请号 |
US19980206740 |
申请日期 |
1998.12.07 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
YANG BAO RU;CHIANG WEN-CHUAN;WU JAMES JANN-MING |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/302;B08B6/00 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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