SEALED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a sealed semiconductor device with high sealing degree. SOLUTION: This device is made to have a structure in which an n type reversal part 35 is provided on a part of a surface layer of a p type frame part 30 and a p+ type electric circuit 36 is provided on the n type inversion part 35. The p+ type electric circuit 36 is connected by a bridge 501 constituted of each p type electrode 32 and each metallic film. The p type frame part 30 and the p type electrode 32 are insulated across a groove part 600 and the p type electrode 32 is electrically connected with the p+ type electric circuit 36. The p type frame part 30 is formed by p type silicon, the n type inversion part 35 is inverted to an n type in conductivity by impurity and the p+ type electric circuit 36, is further made a p+ type by impurity. Because both of the n type inversion part 35 and the p+ type electric circuit 36 are formed in the vicinity of the surface layer of the p type frame part 30 in injection of impurity, the smoothness degree is extremely good, and projection and collapse may be neglected. Therefore, a joining with extremely excellent airtightness can be performed at the time of jointing with a cover part.