发明名称
摘要 We have found that etching of a body (10) that comprises exposed Si (15) as well as a Ti-comprising metal layer (13) (e.g., a patterned Ti/Pt layer) in an amine-based anisotropic etchant for Si (e.g., 100 DEG C EDP) frequently results in undesirable changes in the Ti-comprising metal layer. We have also found that the changes can be substantially reduced or eliminated by electrolytic means, namely, by making the metal layer the anode in an electrolytic cell that contains the etchant.
申请公布号 JP3162910(B2) 申请公布日期 2001.05.08
申请号 JP19940146897 申请日期 1994.06.29
申请人 发明人
分类号 H01L21/306;G02B6/36;H01L21/3063;(IPC1-7):H01L21/306 主分类号 H01L21/306
代理机构 代理人
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