摘要 |
We have found that etching of a body (10) that comprises exposed Si (15) as well as a Ti-comprising metal layer (13) (e.g., a patterned Ti/Pt layer) in an amine-based anisotropic etchant for Si (e.g., 100 DEG C EDP) frequently results in undesirable changes in the Ti-comprising metal layer. We have also found that the changes can be substantially reduced or eliminated by electrolytic means, namely, by making the metal layer the anode in an electrolytic cell that contains the etchant. |