| 摘要 |
The present invention provides a method of manufacturing a semiconductor device, comprising the steps of forming a gate insulating film, on a semiconductor substrate, forming a gate electrode containing a refractory metal layer on the gate insulation film, and heat-processing the semiconductor substrate in an atmosphere containing water vapor and hydrogen, to lessen a damage caused to a portion of the semiconductor substrate, which is located close to an end portion of the gate electrode. The heat-processing step is carried out while controlling a vapor pressure of a refractory metal oxo-acid generated on a surface of the high-melting metal layer.
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