| 摘要 |
A method and apparatus for performing multiple implantations in a semiconductor wafer is used to set variable implantation waveforms. An implanter is used, which allows for setting of variable waveforms, corresponding to energy, beam current, and angle, used for implantation. At least one of a ramping voltage, a ramping beam current source, and a programmable motor mechanically connected to a wafer table is used to obtain the variable waveforms. Using the implanter and method of the invention, detailed doping profiles are created using only a single implant. Such detailed doping profiles are used to create high gradient retrograde wells, and transistors with punch-through suppression implants and channel implants with controlled dopant gradients.
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