| 摘要 |
A far-ultraviolet resist is a chemically amplified resist comprising a base resin and a photoacid generator. As the base resin, used are resins having a cyclic carbonate bonded by an amid bond, which is highly transparent to the far-ultraviolet radiation and is excellent in resistance to etching. These resins include t-butyl protective poly(2,5-carboxy nor-bornane amide), t-butyl protective poly(p-carboxy amino-cyclohexane amide), and t-butyl protective poly(2,5-carboxy amino-adamantane amide). These resins provide excellent adhesion to Si substrates, improved resistance to dragging and placement after exposure, and improved pattern shapes.
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