| 摘要 |
PURPOSE: A thin film band pass filter and its manufacturing method are provided to minimize the parasitic capacitance and to increase the Q value of the inductor and to minimize the filter insertion loss. CONSTITUTION: The thin film band pass filter comprises a substrate(50), a plurality of the first capacitors(60) mounted on the substrate and connected in series with each other, the second capacitor(70) connected to the end terminal of the first capacitor, an inductor(80) connected in parallel with the second capacitor, and a plurality of supporters(90) for supporting the substrate and/or the inductor. The first and second capacitors have the first metallic thin layer(61), the dielectric layer(63), and the second metallic thin layer(65). The electrically connected first and second metallic thin layers are supported by the second capacitor or/and the substrate. The inductor includes the screw inductor, the first connection part to connect the inner terminal of the inductor to one metallic layer of the second capacitor, and the second connection part to connect the outer terminal of the inductor to the other metallic layer of the second capacitor. |
