| 摘要 |
PURPOSE: A method for connecting signal lines of a semiconductor memory is provided which uses a power mesh line running on a metal line without widening the layout area of a sense amplifier and cross area when a global signal used for the cross area is additionally needed, to reduce the chip size. CONSTITUTION: A part of power mesh lines(411,412) connected to sub word drivers(410,420) on metal lines is changed into a global signal line used for a cross area. The changed line is placed adjacent to the cross-area. A metal pattern is modified to allow the changed line to secure a space for connecting contacts(412,422). Since the power mesh line has the wide width and space, the metal lines are controlled to insert a new metal line and use the new metal line as a required signal line.
|
