METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device using a methylsilses quioxane(MSSQ) of a low dielectric constant as an interlayer dielectric layer is provided to reduce an RC delay time caused by a contact fail in the interlayer dielectric layer. CONSTITUTION: In the method, a metal line(11) is formed on a substrate(10) and then covered with a capping layer(13) made of a CVD oxide layer. The MSSQ layer(15) is coated thereon, and a CVD silicon oxide layer(17) is then deposited on the MSSQ layer(15). All the layers(13,15,17) lying above the metal line(11) are etched to form a contact hole therein by using a superjacent photoresist layer(19). Thereafter, a densified silicon oxide layer(30) is formed thinly on a surface of the MSSQ layer(15) exposed to the contact hole by irradiation of an ion beam. After that, the photoresist layer(19) is removed by the ion beam.