| 摘要 |
PURPOSE: A novel photoresist monomer, its polymer are provided which excellent etching-resistant property, heatproof property and adhesive property and is thus adequate for a lithography process using a light source in an area of deep ultra violet rays, such as ArF, KrF, EUV, electron-beam and X-ray, being applicable to high-density fine pattern of less than 0.15 micrometer. CONSTITUTION: The photoresist monomer is vinyl cyclohexanol compound represented by the formula (1), wherein, R is H or methyl group. The photoresist polymer is prepared by: (i) dissolving a monomer of the formula (1) and at least one monomer selected from the compounds of the chemical formulae 2-4 in an organic solvent; (ii) adding a polymerization initiator to the product solution of the step (i); and (iii) reacting the product solution of the step (ii) under nitrogen or argon atmosphere. In the formula (2), R1 is vinyl group substituted by linear or branched alkyl having 1-5 carbon atoms or cycloalkyl having 1-10 carbon atoms and R' is protecting group being sensitive to acid. In the formula (3), R2 is vinyl group substituted by linear or branched alkyl having 1-5 carbon atoms or cycloalkyl having 1-10 carbon atoms. The photoresist composition comprises the photoresist polymer prepared by polymerizing the monomer of the formula (1) and at least one monomer selected from the compounds of the formulae 2-4, organic solvent and photoacid generator. The method for forming the photoresist pattern comprises steps of: (i) coating the upper part of layer to be aquatinted with the photoresist composition to form photoresist film; (ii) exposing the photoresist film to light; and (iii) developing the product of the step (ii) to obtain desired pattern. |
