| 摘要 |
PURPOSE: A chemical mechanical polishing composition used in a semiconductor process is provided to prevent a depression on a metal circuit, by effectively decreasing a metal elimination speed at a lower pressure and by making water-soluble anion chemicals coated on a metal layer while the metal layer is polished. CONSTITUTION: The chemical mechanical polishing composition includes the water-soluble anion chemicals. The anion chemicals include an acrylylate-, phosphate-, sulphate- or sulphonate-containing compound, polymer and/or copolymer, at least two compounds, mixture of polymer and/or copolymer.
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