| 摘要 |
PURPOSE: A method for manufacturing a micro machine is provided to prevent a flow or loss of the first sacrificial layer for forming a girder layer. CONSTITUTION: In the method, an insulating layer(110) is formed on a semiconductor memory device(100), and electrode patterns(120) are then formed thereon for interconnection with the memory device(100). The electrode patterns(120) are insulated from each other by a superjacent insulating cover(130) still exposing some of the electrode patterns(120). Next, the first sacrificial layer(140) is formed on an overall structure except the exposed electrode patterns(120). The first sacrificial layer(140) is then cured by ultraviolet stabilizer. Thereafter, the first metal pattern(150) is formed as the girder layer on the first sacrificial layer(140). The second sacrificial layer(160) is then formed thereon, exposing a portion of the girder layer(150). Next, the second metal layer(170') is formed on the second sacrificial layer(160) and the exposed portion of the girder layer(150). After the second metal layer(170') is patterned by an overlying photoresist pattern(180), all the sacrificial layers(140,160) are removed.
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