METHOD FOR FORMING COBALT DISILICIDE CONTACT HOLE BY CHEMICAL VAPOR DEPOSITION PROCESS

摘要

PURPOSE: A method for forming a cobalt disilicide contact hole by chemical vapor deposition process is provided to simplify a contact formation process by forming CoSi2 epitaxial layer of a single crystal or nearing to a single crystal having (100) direction such as silicon while depositing cobalt metal on a silicon substrate of (100) direction at temperature of 600 °C using a low pressure CVD method. CONSTITUTION: By introducing a cobalt-organic metal source into a reactor, cobalt is deposited at temperature of 600°C or greater using a low pressure chemical vapor deposition method. An epitaxial layer CoSi2(7) is formed on a source and a drain, and a polycrystalline CoSi2(7) is formed on a gate. A cobalt metal over an oxide layer is etched, thereby forming a cobalt disilicide contact. In CoSi2(7) formation process, the cobalt-organic metal source is selected from (C5H5)2Co, Co(CO)3NO, C5H5Co(CO)2, Co2(CO)8 or Co4(CO)12.