METHOD OF FORMING LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A line forming method for semiconductor device is provided to enhance the properties of an aluminum line by rehabilitating damage of the line through reflow features due to heat treatment. CONSTITUTION: An interlayer insulation film(30) is deposited on a semiconductor substrate(10). A portion of lines is etched, and a contact hole is etched to expose a portion of a semiconductor device(20). A titanium layer(40) and a titanium nitride layer(50) are formed in sequence on the inter-layer insulation film(30) and the exposed semiconductor device(20) to form a metal barrier layer. The metal barrier layer enhances adhering force between an aluminum layer(60) and the inter-layer insulation film(30) and prevents a reaction of aluminum with the semiconductor substrate(10) and the inter-layer insulation film(30). An aluminum layer(60) is formed on the titanium nitride layer(50). The aluminum layer(60) is flattened to expose the inter-layer insulation film(30) and form an aluminum line. The aluminum line is heat treated again to be flattened.