MASK HAVING PATTERN FOR PREVENTING CRACK IN SILICON OXYNITRIDE LAYER AND METHOD FOR FORMING THE LAYER BY USING THE MASK

摘要

PURPOSE: A mask having a pattern for preventing a crack in a silicon oxynitride layer and a method for forming the layer by using the mask are provided. CONSTITUTION: The silicon oxynitride layer is deposited on a silicon wafer and then covered with a photoresist layer. The photoresist layer is then patterned by the mask to obtain a desired pattern of the silicon oxynitride layer. The mask includes a transparent substrate(30) made of quartz, and a quadrilateral pattern(40) formed of an opaque material such as chromium on the substrate(30) to develop the photoresist layer into a required pattern. The quadrilateral pattern(40) has four corners(40a) and four sides(40b). In particular, the mask has a dummy pattern(45) formed around the corners(40a) of the quadrilateral pattern(40). The dummy pattern(45) having a very small size is arranged irregularly to prevent the crack produced at corners of the patterned silicon oxynitride layer.