| 摘要 |
PURPOSE: An apparatus for heating rapidly a semiconductor is provided to improve the productivity by performing simultaneously a diffusion process for a multitude of wafer. CONSTITUTION: An apparatus for heating rapidly a semiconductor comprises a chamber(11), a heating portion, and a transfer. The chamber(11) performs a diffusion process. The heating portion heats an inner side of the chamber(11). The transfer loads and unloads a wafer(W). The chamber(11) is formed with an inflow hole(11a), an exhaust hole(11b), and a wafer fixing hole(13). The inflow hole(11a) receives a deposition gas for diffusion. The exhaust hole(11b) exhausts non-deposited gas. The wafer fixing hole(13) loads the wafer to a vertical direction. The heating portion is installed between each chamber(11).
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