POLYSILICON THIN FILM TRANSISTOR WITH IMPROVED CURRENT CHARACTERISTICS AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A polysilicon thin film transistor(TFT) is provided to improve current characteristics by reducing leakage current in an ON state of the TFT and increasing mobility of electrons.. CONSTITUTION: A source(11), a channel(12) and a drain(13a) are formed on a glass substrate as a thin film. A gate insulation layer(14) is formed on the channel(12), and a gate(15) is formed on the gate insulation layer(14). The channel(12) has amorphous silicon structures and polysilicon structure. The polysilicon structures are formed on the amorphous silicon structures to cover the amorphous silicon structure. Carriers flow through the surface of the polysilicon structures with rapid carrier mobility. Leakage current is restricted by the distribution of the amorphous silicon structures. The channel(12) is manufactured through sputtering.