METHOD FOR REDUCING CAPACITANCE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for reducing capacitance of a semiconductor device is provided to remarkably reduce parasitic capacitance, by forming a void in an inter-metal dielectric to decrease a relative dielectric constant of the inter-metal dielectric. CONSTITUTION: The first interlayer dielectric(21), a conductive layer(22) and a cap insulating layer are sequentially formed on a semiconductor substrate. The cap insulating layer and the conductive layer are sequentially patterned to form an inter-metal pattern(220,230) of a stacked structure composed of the remaining cap insulating layer and conductive layer. The second interlayer dielectric(25) having a void is formed on the first interlayer dielectric including the inter-metal pattern.