POWER INTERCONNECTION STRUCTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PURPOSE: A power interconnection structure of a semiconductor integrated circuit is provided to increase a power supply rate by forming a power supply voltage line and an integrated circuit on the same layer, and to reduce a voltage difference in the power supply voltage line by forming the power supply voltage line with the same metal layer. CONSTITUTION: The first metal layer(120) applies the first power supply voltage to a semiconductor integrated circuit(110), installed on a circumference of a semiconductor integrated circuit region. The second metal layer(130) is formed on both right and left sides of the semiconductor integrated circuit region and between the first metal layers to apply the second power supply voltage to the semiconductor integrated circuit, formed on the first metal layer. The third metal layer(140) is formed in the same region as the first metal layer in both upper and lower sides of the semiconductor integrated circuit region to apply the second power supply voltage to the semiconductor integrated circuit, formed on the second metal layer. The second and third metal layers are connected by a contact pad(135,136).