METHOD OF FORMING SELF-ALIGNED CONTACT HOLE BY USING HARD MASK

摘要

PURPOSE: A method of forming a self-aligned contact hole is provided to reduce error rate and enhance reliability of a semiconductor device by increasing selection ratio between an oxide layer and a nitride layer through the use of a hard disk. CONSTITUTION: A certain conductor layer pattern is formed on a semiconductor substrate and a capping part(106) is formed to cover the conductor layer pattern. An interlayer insulating film(120) is formed on the whole surface of the substrate including the conductor layer pattern and the capping part(106). A hard mask layer is formed on the interlayer insulating film. A photoresist layer is formed on the hard mask layer. The photoresist layer is patterned to form a photoresist pattern. The hard mask layer is etched by using the photoresist pattern as a mask to form a hard mask pattern(130') and remove the photoresist pattern. The hard mask pattern(130') is used as the mask in etching an interlayer insulating film with CxFy+CO based plasma to form a contact hole. The hard mask pattern(130') is removed.