发明名称 |
THIN FILM OF SINGLE-GRANULAR STRUCTURE FOR MAGNETIC SENSOR |
摘要 |
PURPOSE: A thin film of a single-granular structure for a magnetic sensor is provided to form a magnetic thin film by using a perovskite manganese oxide layer instead of an existing colossal magneto-resistance having a triple layer structure. CONSTITUTION: A thin film of a single-granular structure for a magnetic sensor comprises the following structure. A La0.67(Sr,Ba)0.33MnO3 perovskite manganese oxide layer of a single-granular structure is formed on a polycrystalline substrate. The manganese oxide layer has a prominent magneto-resistance under a low magnetic field and a normal temperature. The polycrystalline substrate is formed with any one of a polycrystalline Si/SiO2 or a YSZ(Yttrium Stabilized Zirconia).
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申请公布号 |
KR20010035759(A) |
申请公布日期 |
2001.05.07 |
申请号 |
KR19990042480 |
申请日期 |
1999.10.02 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
OH, YEONG JE;SIM, IN BO |
分类号 |
H01L43/08;G01R33/09;(IPC1-7):H01L43/08 |
主分类号 |
H01L43/08 |
代理机构 |
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