METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to improve capacitance, by depositing hemispherical grain(HSG) on inner and outer surfaces of a cylinder of a storage electrode to increase a surface area. CONSTITUTION: The first conductive layer is formed on a semiconductor substrate(470). The first conductive layer is partially etched and confined to each cell unit, and a protrusion having an almost vertical sidewall is formed. A spacer functioning as an etching mask in an anisotropic etching process regarding a material constituting the first conductive layer is formed on the sidewall of the protrusion. The first conductive layer is anisotropically etched by using the spacer until a lower layer of the first conductive layer is partially exposed, to a cylindrical storage electrode pattern(515b) confined to each cell unit. Hemispherical grain(HSG)-polysilicon is deposited on the storage electrode pattern to form a storage electrode(600) which has the HSG-polysilicon on inner and outer surfaces of its cylinder. A dielectric layer(620) and the second conductive layer are formed on the storage electrode.