| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to simplify a manufacturing process, by forming an insulating layer pattern exposing a portion for a bitline and a storage electrode while using deposition of a conductive layer and a chemical mechanical polishing(CMP) process. CONSTITUTION: A sacrificial insulating layer is formed on a semiconductor substrate, a plurality of photoresist layer patterns are formed on the sacrificial insulating layer, wherein the photoresist layer patterns protect a portion for a storage electrode and have an island type. The sacrificial insulating layer is etched to form a sacrificial insulating layer pattern by using the photoresist layer pattern as an etching mask, and the photoresist layer pattern is eliminated. The first insulating layer spacer is formed in an outer portion of the sacrificial insulating layer pattern to connect the sacrificial insulating layer pattern in a direction that a bitline is formed. The first conductive layer and an insulating layer are formed on the entire surface, and a chemical mechanical polishing(CMP) process is performed by using the sacrificial insulating layer and the first insulating layer spacer as an etch blocking layer to form the bitline. The sacrificial insulating layer pattern and the first insulating layer spacer are eliminated to form a groove exposing the portion for the storage electrode. The second insulating layer spacer is formed inside the groove. The second conductive layer is formed on the entire surface, and a CMP process is carried out to form the storage electrode.
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