发明名称 |
CIRCUIT FOR REDUCING VOLTAGE VARIATION OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A circuit for reducing voltage variation of a semiconductor device is provided to stably guarantee noise margin by reducing a variation phenomenon of power supply, and to eliminate over-current caused by overshooting and undershooting. CONSTITUTION: A reference voltage generating circuit generates a reference voltage. A switching circuit receives the reference voltage, and has a threshold voltage smaller than a difference between a power supply voltage of a power supply voltage terminal or ground terminal and the reference voltage. The switching circuit turns on when the voltage difference is larger than the threshold voltage, and reduces a variation phenomenon of power supply of a semiconductor device.
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申请公布号 |
KR20010035667(A) |
申请公布日期 |
2001.05.07 |
申请号 |
KR19990042359 |
申请日期 |
1999.10.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, YONG JUN |
分类号 |
H01L27/01;(IPC1-7):H01L27/01 |
主分类号 |
H01L27/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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