发明名称 CIRCUIT FOR REDUCING VOLTAGE VARIATION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A circuit for reducing voltage variation of a semiconductor device is provided to stably guarantee noise margin by reducing a variation phenomenon of power supply, and to eliminate over-current caused by overshooting and undershooting. CONSTITUTION: A reference voltage generating circuit generates a reference voltage. A switching circuit receives the reference voltage, and has a threshold voltage smaller than a difference between a power supply voltage of a power supply voltage terminal or ground terminal and the reference voltage. The switching circuit turns on when the voltage difference is larger than the threshold voltage, and reduces a variation phenomenon of power supply of a semiconductor device.
申请公布号 KR20010035667(A) 申请公布日期 2001.05.07
申请号 KR19990042359 申请日期 1999.10.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, YONG JUN
分类号 H01L27/01;(IPC1-7):H01L27/01 主分类号 H01L27/01
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