NON-DESTRUCTIVE READ-OUT FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A non-destructive read-out field effect transistor is provided to obtain enhanced stability by manufacturing an SBN thin film through an organic metal heat decomposition. CONSTITUTION: Ba 2-ethylhexanoate and Sr 2-ethylhexanoate are solved into xylene solvent and Nb-ethoxide is solved into 2-methoxyethanol to prepare a precursor solution. The precursor solution is deposited on a substrate to form an SBN thin film through spin-coating at 3000 rpm. The spin coated thin film is first dried at 150 deg.C for 5 minutes, and second dried at 450 deg.C for 5 minutes. The second drying is repeated to obtain a desired thickness of the thin film. Annealing is performed for the final crystallization at 850 deg.C under an oxygen or air atmosphere for 30 minutes to 1 hour.