SELF-ALIGNED INGAP/GAAS DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A self-aligned InGap/GaAs double heterojunction bipolar transistor and a method for manufacturing the same are provided to form a high-speed multi-function circuit by performing an emitter up mode and a collector up mode through one element of a transistor. CONSTITUTION: A half-insulating InGap buffer layer(200) is grown on a half-insulation substrate(100). The first n+GaAs contact layer(300) is grown on an upper portion of the half-insulating InGap buffer layer(200). An n-InGap collector/emitter layer(400) is grown on an upper portion of the first n+GaAs contact layer(300). A p+GaAs base layer(500) is grown on an upper portion of the n-InGap collector/emitter layer(400). An n-InGap emitter/collector layer(600) is grown on an upper portion of the p+GaAs base layer(500). The second n+GaAs contact layer(700) is grown on an upper portion of n-InGap emitter/collector layer(600). A collector/emitter metal(800), a base metal(900), and an emitter/collector metal(1000) are formed on upper portions of the second n+GaAs contact layer(700), the p+GaAs base layer(500), and the first n+GaAs contact layer(300), respectively.