| 摘要 |
PURPOSE: A method for manufacturing a tantalum oxide layer capacitor is provided to prevent the quality of a thin film on a wafer from being deteriorated and to prevent a leakage current, by supplying radio frequency(RF) power to the wafer so that byproduct remaining on the wafer is plasma-ionized. CONSTITUTION: A wafer(30) is fixed to a supporting unit(20) installed inside a chamber(10). The inside of the chamber maintains constant pressure, and Ta(OC2H5)5 and O2 gas are supplied to the chamber to form a tantalum oxide layer on the wafer. Radio frequency(RF) power is periodically supplied to the surface of the wafer. A two-step pumping process is performed in the chamber to exhaust byproduct inside the chamber.
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