| 摘要 |
PURPOSE: A method for manufacturing a storage electrode of a semiconductor device is provided to reduce an ultimate step difference in a cell region, by repeating the process for selectively depositing a conductive layer after a storage electrode contact plug is formed and a storage electrode pattern is formed by using an insulating layer. CONSTITUTION: An interlayer dielectric(17) equipped with a storage electrode contact plug is formed on a semiconductor substrate(11) having a predetermined lower structure. A sacrificial insulating layer is formed on the entire surface, and a photoresist layer pattern exposing a portion reserved for a storage electrode is formed on the sacrificial insulating layer. The sacrificial insulating layer is wet-etched by a predetermined thickness to form an undercut by using the photoresist layer pattern as an etching mask, and a dry-etching process is performed to expose the storage electrode contact plug. The photoresist layer pattern is removed, and a conductive layer connected to the storage electrode contact plug is selectively formed to manufacture a mushroom-shaped storage electrode. A storage electrode of a multilayered structure is formed by performing the processes more than once.
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