发明名称 POTENTIAL SENSING CIRCUIT FOR SENSING DIFFERENTIAL VOLTAGE LEVEL OF DIFFERENTIAL CAPACITOR
摘要 PURPOSE: A potential sensing circuit for sensing a differential voltage level of a differential capacitor is provided whose voltage sensing part is configured of a tri-state buffer to sense even the small voltage level difference of the differential capacitor. CONSTITUTION: A potential sensing circuit for sensing a differential voltage level of a differential capacitor includes a voltage sensing unit(250) that is converted from an inactive state to an active state after a lapse of a predetermined time after application of a differential voltage pulse for charging the differential capacitor up to a predetermined voltage level, to sense the voltage level of the capacitor. The potential sensing circuit is configured of a tri-state buffer.
申请公布号 KR20010035644(A) 申请公布日期 2001.05.07
申请号 KR19990042333 申请日期 1999.10.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MUN, BYEONG MO;PARK, CHAN JONG;SONG, GI HWAN
分类号 G11C11/24;(IPC1-7):G11C11/24 主分类号 G11C11/24
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