发明名称 |
POTENTIAL SENSING CIRCUIT FOR SENSING DIFFERENTIAL VOLTAGE LEVEL OF DIFFERENTIAL CAPACITOR |
摘要 |
PURPOSE: A potential sensing circuit for sensing a differential voltage level of a differential capacitor is provided whose voltage sensing part is configured of a tri-state buffer to sense even the small voltage level difference of the differential capacitor. CONSTITUTION: A potential sensing circuit for sensing a differential voltage level of a differential capacitor includes a voltage sensing unit(250) that is converted from an inactive state to an active state after a lapse of a predetermined time after application of a differential voltage pulse for charging the differential capacitor up to a predetermined voltage level, to sense the voltage level of the capacitor. The potential sensing circuit is configured of a tri-state buffer.
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申请公布号 |
KR20010035644(A) |
申请公布日期 |
2001.05.07 |
申请号 |
KR19990042333 |
申请日期 |
1999.10.01 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MUN, BYEONG MO;PARK, CHAN JONG;SONG, GI HWAN |
分类号 |
G11C11/24;(IPC1-7):G11C11/24 |
主分类号 |
G11C11/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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