METHOD FOR MANUFACTURING OXIDE LAYER USING PLASMA

摘要

PURPOSE: A method for manufacturing an oxide layer using plasma is provided to maintain the stability of forming the oxide layer, by reducing the first wafer effect, and by minimizing scattering of the thickness of the oxide layer with reference to an objective value. CONSTITUTION: The inside of a chamber for performing an oxide layer is cleaned by using radio frequency. A pro-coating process is performed after the radio frequency cleaning process. The inside of the chamber is purged after the pro-coating process. A deposition process for forming the oxide layer is carried out, wherein plasma prevent the first wafer effect to reduce scattering of the thickness of the oxide layer.