| 摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to form unevenness on a side surface of an insulating layer, by forming a multilayerd insulating layer covered with a storage electrode, wherein the insulating layer is fabricated by a spin-on-glass(SOG) method and a high temperature low pressure deposition(HLD) method which have different etching rates. CONSTITUTION: A storage contact is formed on the first insulating layer formed on a semiconductor substrate(200). The first conductive layer(206) is formed to fill the storage contact. The second insulating layer and the third insulating layer which have different etching rates are consecutively stacked on the semiconductor substrate. The second and third insulating layers are patterned to have a predetermined interval. The patterned second and third insulating layers and the second conductive layer(222) as a storage electrode of a capacitor wherein the second conductive layer covers the first conductive layer, are formed on the semiconductor substrate. A dielectric layer and the third conductive layer(226) as a plate electrode of the capacitor are sequentially formed to cover the second conductive layer.
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