TRANSISTOR HAVING INCLINED IMPURITY AREA AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A transistor having an inclined impurity area is provided to reduce a vertical electrical field by forming an inclined profile through junctions of impurity areas being deeper as being farther from a gate. CONSTITUTION: Element isolating films(12) are formed as the shape of a trench in inactive areas of a semiconductor substrate(10). The first epitaxial layer(14) is formed in an active area of the semiconductor substrate(10). A gate(18) is formed on the epitaxial layer(14) having a gate oxide layer(16) interposed between the gate(18) and the first epitaxial layer(14). A capping layer(20) is formed on the gate(18), and gate spacers(22) are formed at side walls of the capping layer(20). The second epitaxial layers(24) are formed at both sides of the gate spacers(22) and inclined along the first epitaxial layer(14). Impurity areas(26) are formed at both sides of the gate spacers(22) and overlapped with the first and second epitaxial layers(14,24) with inclined junctions. The junctions are deeper as being farther from the gate(18).