METHOD FOR MANUFACTURING METAL OXIDE LAYER USING ATOMIC LAYER DEPOSITION METHOD

摘要

PURPOSE: A method for manufacturing a metal oxide layer using an atomic layer deposition method is provided to easily control a thickness of a thin film by alternatively supplying metal source gas and an oxidizing agent to a process chamber to form a metal oxide layer. CONSTITUTION: A semiconductor substrate is loaded to a chamber. Metal source gas is chemically absorbed to the semiconductor substrate to form a metal atomic layer by supplying the metal source gas of a pulse type to the chamber by an atomic layer deposition method. The metal gas of a pulse type and oxidizing agent of a pulse type are alternatively supplied to the chamber by an atomic layer deposition method, so that the oxidizing agent is chemically absorbed to the metal atomic layer to form a metal oxide layer. Plasma gas for removing a hydroxide radical is supplied to the chamber by an atomic layer deposition method, so that the hydroxide radical generated in forming the metal oxide layer is eliminated.