SEMICONDUCTOR DEVICE HAVING PARTIAL SILICON-ON-INSULATOR STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device having a partial silicon-on-insulator(SOI) structure is to provide the same body contact as a conventional semiconductor device without a design modification, by forming a porous silicon layer or silicon layer under an upper silicon layer to become a path in which the porous silicon layer or the silicon layer partially contact a lower silicon substrate. CONSTITUTION: An upper silicon pattern(25a) is electrically separated from a lower silicon substrate(21) by a separation insulating layer(33a) buried in a reverse T-type hole formed in the lower silicon substrate. A gate insulating layer(38) and a gate electrode(39) are formed on the upper silicon pattern. A source/drain region(36,37) and a channel region between the source and the drain are formed in the upper silicon pattern under both sidewalls of the gate electrode. A silicon layer is formed under the channel region to electrically contact the lower silicon substrate and the silicon pattern.