PHOTORESIST STRIPPER COMPOSITION AND PHOTORESIST STRIPPING METHOD USING THE SAME

摘要

PURPOSE: Provided is a photoresist stripper composition, which effectively and rapidly strips the photoresist coated on a wafer regardless of its kinds and polarities. And a photoresist stripping method using the same is also provided which does not need a rinsing process using organic solvent after a photoresist stripping process. CONSTITUTION: The photoresist stripper composition comprises a mixture containing: (i) 3-35 wt.% of acetone; (ii) 2-13 wt.% of γ-butyrolactone; and (iii) 80-90 wt.% of ester solvent selected from the group consisting of n-butyl acetate, amyl acetate, ethyl acetoacetate, isopropyl acetate and propylene glycol monomethyl ether acetate. The method for stripping photoresist comprises steps of: (i) spraying the photoresist stripper composition on a wafer rotating with relatively low speed(S1); (ii) keeping the wafer stationary(S2); (iii) spin-drying the wafer(S3); (iv) spraying the photoresist stripper composition on the wafer rotating with relatively high speed(S4); (v) spin drying the wafer(S5); (vi) rinsing the wafer with pure water; and (vii) spin-drying the wafer(S7).