METHOD AND APPARATUS FOR FORMING HEMISPHERICAL GRAINED SILICON LAYER

摘要

PURPOSE: A method and an apparatus for forming a hemispherical grained silicon(HSG-SI) layer are provided to reduce production cost and time and to uniformly form the HSG-SI layer. CONSTITUTION: The apparatus(100) includes a housing(101) having a domed processing chamber(110), the first heater fixedly installed in the chamber(110) to apply heat to a wafer(200) mounted thereon, and the second heater(105) fixedly installed over the chamber(110) to increase the temperature in the chamber(110). After the wafer(200) is mounted on the first heater(102), foreign matter such as moisture on the wafer(200) is removed by the heaters and a radiant heat in the chamber(110). A source gas is then injected though a gas injector(130) introduced into the chamber(110) to deposit an amorphous silicon layer on the wafer(200). The wafer(200) is then annealed so that the amorphous silicon layer is transformed into the HSG-SI layer. A lower part of the chamber(110) is surrounded with a heat shield layer(180) to prevent the passage of heat out of the chamber(110).