Automatic P-N junction formation during growth of a heterojunction

摘要

A process for the preparation of a homojunction in a semiconductor substrate, e.g., a p-n junction, during growth of a heterojunction between the substrate and a second semiconductor consisting of either gallium nitride or aluminum nitride where aluminum atoms from the aluminum nitride or gallium atoms from the gallium nitride diffuse into the substrate in a region of the substrate adjacent the aluminum nitride or gallium nitride to form the homojunction.