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发明名称
Verfahren zum Herstellen von SiC durch CVD mit verbesserter Gasausnutzung
摘要
申请公布号
DE59703208(D1)
申请公布日期
2001.05.03
申请号
DE19975003208
申请日期
1997.01.17
申请人
SIEMENS AG
发明人
RUPP, DR.;VOELKL, DR.
分类号
C23C16/32;C23C16/44;(IPC1-7):C23C16/32
主分类号
C23C16/32
代理机构
代理人
主权项
地址
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