发明名称 |
PLASMA TREATMENT FOR POLYMER REMOVAL AFTER VIA ETCH |
摘要 |
A method and article of manufacture of a via in a semiconductor layered device. The method can include applying an OH/H containing plasma, such as H2O or O2 or a forming gas, to a via which has been etched in a layer of the device. A mixture of oxygen and fluorine-based plasma is applied to complete cleaning of the via to provide a clean via with very little loss of dimensional and surface quality. In another aspect the OH/H containing plasma and the oxygen and fluorine-based plasma are applied together to clean the via.
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申请公布号 |
WO0131697(A1) |
申请公布日期 |
2001.05.03 |
申请号 |
WO2000US26115 |
申请日期 |
2000.09.21 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
RAKHSHANDEHROO, MOHAMMAD, R.;CHANG, MARK, S.;HUI, ANGELA, T. |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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