发明名称 |
THIN FILM HG-BASED SUPERCONDUCTORS, THERMOELECTRIC MATERIALSAND METHODS OF FABRICATION THEREOF |
摘要 |
Improved Hg-containing superconducting films and thermoelectric materials ar e provided. The films are fabricated by annealing starting T1-containing films (e.g., T1-1212 or T1-2212) in an Hg-vapor environment so as to cause a substitution of T1 by Hg without substantial alteration of the crystalline structure of the starting films. Preferably, a body comprising a substrate having an epitaxial T1-containing film thereon is annealed under vacuum conditions with a Hg-based bulk; typical annealing conditions are 600-900 ~C for a period of from about 1-20 hours. The final Hg-containing film products have a Jc of at least about 106 A/cm2 (100 K, OT) and a Xmin of up to about 50 %. The thermoelectric materials are prepared by perturbing a crystalline precursor having a structure similar to the final material so as to cause a first molecule to be released from the precursor. A vapor is introduced into the reaction system simultaneous to or shortly after the perturbation step s o as to cause molecules which are within the vapor and are different than the first molecules to replace the first molecules in the precursor.
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申请公布号 |
CA2389454(A1) |
申请公布日期 |
2001.05.03 |
申请号 |
CA20002389454 |
申请日期 |
2000.10.25 |
申请人 |
THE UNIVERSITY OF KANSAS |
发明人 |
WU, JUDY;YAN, SHAO LIN;XIE, YIUAN |
分类号 |
C30B1/04;C30B29/22;C30B33/02;H01L35/14;H01L35/18;H01L35/22;H01L35/34;H01L39/24;(IPC1-7):C01F17/00;C04B35/50;C23C14/08;H01B1/06 |
主分类号 |
C30B1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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