Deep-diffused n-conducting region production in p-doped silicon substrate comprises ion implanting sulfur or selenium as n-foreign material into regions and subsequently heat treating

摘要

Production of deep-diffused n-conducting regions (8, 9) in a p-doped silicon substrate (1) comprises ion implanting sulfur or selenium as n-foreign material into the regions and subsequently heat treating. Preferred Features: The silicon substrate is a silicon wafer into which the regions are inserted on both sides so that they overlap in half the wafer depth. Ion implantation is masked using a silicon dioxide or photo-lacquer layer (2, 3).