Semiconductor component comprises vertical stack comprising source, drain and intermediate layer, gate comprising insulating and conducting layer connecting source and drain and tunnel current flowing in section of gate

摘要

Semiconductor component in which a tunnel current can be controlled by a gate comprises an n-doped layer (2) which acts as source and a p-doped layer (3) which acts as drain with an intermediate layer (4) positioned between them to form a vertical stack. A gate made up of an insulating layer (5) and a conducting layer (6) forms a path for current to flow between the n- and p-doped layers, the tunnel current flowing in at least a section of the gate Independent claims are included for: (a) use of the component as a transistor; and (b) a method of preparing the component comprising: (i) applying the source, drain and gate to a silicon substrate (1); (ii) etching their vertical edges; (iii) applying an insulating layer to the edges; (iv) applying a conducting layer; and (v) forming contact holes and metallising to connect the source, drain and gate.