SEMICONDUCTOR DEVICE WITH AN UNDULATING BASE REGION AND METHOD THEREFOR

摘要

A field effect device (30) uses a single continuous base region (40) having branches (82) with a generally undulating edge. A continuous gate layer (34) overlies the semiconductor substrate and is self-aligned to the plurality of base branches. The undulating structure of the base region improves channel density, and thus lowers on-resistance, and the use of a single base region ensures that all portions of the base region throughout the device will be at a substantially constant electric potential.