| 发明名称 |
CMP slurry for planarizing metals |
| 摘要 |
<p>A CMP slurry is formulated with an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. The slurry may further include abrasive particles, inhibitors, pH adjusting agents, and combinations thereof.</p> |
| 申请公布号 |
EP1095992(A2) |
申请公布日期 |
2001.05.02 |
| 申请号 |
EP20000309511 |
申请日期 |
2000.10.27 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WANG, YUCHUN;BAJAJ, RAJEEV;REDEKER, FRED C. |
| 分类号 |
B24B37/00;C09G1/02;C09K3/14;C23F1/00;H01L21/304;H01L21/306;(IPC1-7):C09G1/00 |
主分类号 |
B24B37/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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