Heavy gas plasma sputtering

摘要

A copper metallization method for depositing a conformal barrier layer (174) and seed layer (176) in a plasma chamber (100). The barrier layer and seed layer are preferably deposited in a plasma chamber having an inductive coil (122) and a target (104) comprising the material to be sputtered. One or more plasma gases having high molar masses relative to the target material are then introduced into the chamber to form a plasma. Preferably, the plasma gases are selected from xenon, krypton or a combination thereof.